CT Micro CT8124-T52
The CT8124 –T52 uses high performance Trench Technology to provide excellent RDS(ON)and low gate charge which is suitable for most of the synchronous buck converter applications .| Part No. | CT8124-T52 |
|---|---|
| Datasheet | CT8124-T52 Download |
| Manufacturer |  CT Micro |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Drain-Source Breakdown Voltage VDSS = 20V● Drain-Source On-Resistance RDS(ON) 23m, at VGS= 4.5V, ID= 5.0A RDS(ON) 27m, at VGS= 2.5V, ID= 3.5A RDS(ON) 34m, at VGS= 1.8V, ID= 2.8A
● Continuous Drain Current at TC=25℃ID = 9.0A
● Advanced high cell density Trench Technology
● RoHS Compliance & Halogen Free
DESCRIPTION
APPLICATIONS
● Notebook● High side switching
● Power Management Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 3 Aug, 2015 CT8124-T52 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current @TC=25℃ IDM Pulsed Drain Current PD Total Power Dissipation @TC=25℃ TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJC Thermal Resistance Junction-Case Test Conditions Steady State Test Conditions 20 ±8 9 30 2.5 -55 to 150 -55 to 150 Min Notes V V A...
