Datasheet Details
| Part number | CT8124-T52 |
|---|---|
| Manufacturer | CT Micro |
| File Size | 1.05 MB |
| Description | N-Channel MOSFET |
| Datasheet | CT8124-T52-CTMicro.pdf |
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Overview: CT8124-T52 N-Channel Enhancement MOSFET.
| Part number | CT8124-T52 |
|---|---|
| Manufacturer | CT Micro |
| File Size | 1.05 MB |
| Description | N-Channel MOSFET |
| Datasheet | CT8124-T52-CTMicro.pdf |
|
|
|
The CT8124 –T52 uses high performance Trench Technology to provide excellent RDS(ON)and low gate charge which is suitable for most of the synchronous buck converter applications .
Applications Notebook High side switching Power Management Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 3 Aug, 2015 CT8124-T52 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current @TC=25℃ IDM Pulsed Drain Current PD Total Power Dissipation @TC=25℃ TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJC Thermal Resistance Junction-Case Test Conditions Steady State Test Conditions 20 ±8 9 30 2.5 -55 to 150 -55 to 150 Min Notes V V A1 A1 W2 °C °C Min Typ Max Units Notes -- -- 4.5 oC /W 1,3 CT Micro Proprietary & Confidential Page 2 Rev 3 Aug, 2015 CT8124-T52 N-Channel Enhancement MOSFET Electrical Characteristics TA = 25°C (unless otherwise specified) Static Characteristics Symbol Parameters BVDSS Drain-Source Breakdown Voltage IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current Test Conditions VGS= 0V, ID= 250μA VDS = 20V, VGS = 0V VGS = 8V, VDS = 0V Min Typ Max Units Notes 20 - - V -- 1 µA - - 100 nA On Characteristics Symbol Parameters RDS(ON) Drain-Source On-Resistance VGS(th) Gate-Source Threshold Voltage Test Conditions VGS = 4.5V, ID = 5.0A VGS = 2.5V, ID =3.5A VGS = 1.8V, ID =2.8A VGS = VDS, ID =250μA Min Typ Max
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