CTD6006-T52 Datasheet | CT Micro

CTD6006-T52 N-Channel Enhancement MOSFET Features - Drain-Source Breakdown Voltage VDSS 60V - Drain-Source On-Resistance RDS(ON) 20m, at VGS= 10V, ID= 20A RDS(ON) 24m, at VGS= 4.5V, ID= 10A - Continuous Drain Current at TC=25℃, ID =35A - Advanced high cell density Trench Technology - Ro HS pliance & Halogen Free Description The CTD6006-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application. Applications - Super Low Gate Charge - 100% EAS Guaranteed - Green Device Available - Excellent Cd V/dt effect decline Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 1 Jan, 2018 CTD6006-T52 N-Channel Enhancement...