CTH2506NS-T52 Datasheet | CT Micro

Features - Drain-Source Breakdown Voltage VDSS 60V - Drain-Source On-Resistance RDS(ON) 27m, at VGS= 10V, ID= 20A RDS(ON) 34m, at VGS= 4.5V, ID= 16A - Continuous Drain Current at TC=25℃ID =27.6A - Advanced high cell density Trench Technology - Ro HS pliance & Halogen Free Description The CTH2506NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application. Applications - DC/DC Converter - Power Management - Load Switch Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 3 Jun, 2015 CTH2506NS-T52 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25o C Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current @TC=25℃ IDM Pulsed Drain Current PD Total Power Dissipation @TC=25℃ TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJC Thermal Resistance...