CTH2506NS-T52 Datasheet PDF - CT Micro N-Channel MOSFET Specs

CTH2506NS-T52 - N-Channel MOSFET

Datasheet Summary

Description

The CTH2506NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application.

Features

Drain-Source Breakdown Voltage VDSS 60V.
Drain-Source On-Resistance RDS(ON) 27m, at VGS= 10V, ID= 20A RDS(ON) 34m, at VGS= 4.5V, ID= 16A.
Continuous Drain Current at TC=25℃ID =27.6A.
Advanced high cell density Trench Technology.
RoHS Compliance & Halogen Free.

Datasheet Details

Part number	CTH2506NS-T52
Manufacturer	CT Micro
File Size	1.03 MB
Description	N-Channel MOSFET
Datasheet	CTH2506NS-T52 Datasheet
Additional preview pages of the CTH2506NS-T52 datasheet.

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Full PDF Text Transcription

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CTH2506NS-T52 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 60V  Drain-Source On-Resistance RDS(ON) 27m, at VGS= 10V, ID= 20A RDS(ON) 34m, at VGS= 4.5V, ID= 16A  Continuous Drain Current at TC=25℃ID =27.6A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Description The CTH2506NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application.

Published: May 20, 2020 |