CTL0015PS-R3 Datasheet | CT Micro

CTL0015PS-R3 P-Channel Enhancement MOSFET Features - Drain-Source Breakdown Voltage VDSS -50 V - Drain-Source On-Resistance RDS(ON) 5, at VGS= -5.0V, ID= -0.1A - Continuous Drain Current at TC=25℃ID = -0.13A - Advanced high cell density Trench Technology - Ro HS pliance & Halogen Free Description The CTL0015PS-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications. Applications - DC to DC Converter - Load switching - Battery Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 1 Nov, 2013 CTL0015PS-R3 P-Channel Enhancement...