CTL0382PS Datasheet | CT Micro

CTL0382PS P-Channel Enhancement MOSFET Features - Drain-Source Breakdown Voltage VDSS - 20 V - Drain-Source On-Resistance RDS(ON) 42m, at VGS= - 4.5V, IDS= - 3.8A RDS(ON) 57m, at VGS= - 2.5V, IDS= - 3.0A - Continuous Drain Current at TC=25℃ ID = - 3.8A - Advanced high cell density Trench Technology - Ro HS pliance & Halogen Free Applications - Power Management - Lithium Ion Battery Description The CTL0382PS uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications . Package Outline Schematic Pin 2 GATE Drain Pin 1 Pin 3 Source Gate: Drain: Source: Pin 1 Pin2 Pin3 CT Micro Proprietary &...