CTL0502NS-R3 Datasheet PDF - CT Micro N-Channel MOSFET Specs

CTL0502NS-R3 - N-Channel MOSFET

Datasheet Summary

Description

The CTL0502NS-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications.

Power Management Lithium Ion Battery Package Outline Schematic Drain Drain Gate

Features

Drain-Source Breakdown Voltage VDSS 20 V.
Drain-Source On-Resistance RDS(ON) 21mΩ, at VGS= 4.5V, ID= 5.0A RDS(ON) 24mΩ, at VGS= 2.5V, ID= 3.5A RDS(ON) 31mΩ, at VGS= 1.8V, ID= 2.8A ℃.
Continuous Drain Current at TA=25 ,ID = 5.0A.
Advanced high cell density Trench Technology.
RoHS Compliance & Halogen Free.

Datasheet Details

Part number	CTL0502NS-R3
Manufacturer	CT Micro
File Size	766.67 KB
Description	N-Channel MOSFET
Datasheet	CTL0502NS-R3 Datasheet
Additional preview pages of the CTL0502NS-R3 datasheet.

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Full PDF Text Transcription

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CTL0502NS-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS 20 V • Drain-Source On-Resistance RDS(ON) 21mΩ, at VGS= 4.5V, ID= 5.0A RDS(ON) 24mΩ, at VGS= 2.5V, ID= 3.5A RDS(ON) 31mΩ, at VGS= 1.8V, ID= 2.8A ℃• Continuous Drain Current at TA=25 ,ID = 5.0A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Description The CTL0502NS-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications.

Published: May 20, 2020 |