Datasheet Details
| Part number | CTLM13PS05-R3 |
|---|---|
| Manufacturer | CT Micro |
| File Size | 509.76 KB |
| Description | P-Channel MOSFET |
| Datasheet | CTLM13PS05-R3-CTMicro.pdf |
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Overview: CTLM13PS05-R3 P-Channel Enhancement MOSFET.
| Part number | CTLM13PS05-R3 |
|---|---|
| Manufacturer | CT Micro |
| File Size | 509.76 KB |
| Description | P-Channel MOSFET |
| Datasheet | CTLM13PS05-R3-CTMicro.pdf |
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The CTLM13PS05-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .
Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 1 Jun, 2015 CTLM13PS05-R3 P-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ℃ID Continuous Drain Current @TA=25 IDM Pulsed Drain Current ℃PD Total Power Dissipation @TA=25 TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJA Thermal Resistance Junction-Ambient (t=10s) Test Conditions Ratings -50 ±20 -0.13 -0.52 0.225 -55 to 150 -55 to 150 Units V V A A W oC oC Notes 1 1 2 Min Typ Max Units Notes - 555 - oC /W 1,4 CT Micro Proprietary & Confidential Page 2 Rev 1 Jun, 2015 CTLM13PS05-R3 P-Channel Enhancement MOSFET Electrical Characteristics TA = 25°C (unless otherwise specified) Static Characteristics Symbol Parameters BVDSS Drain-Source Breakdown Voltage IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current Test Conditions VGS=0V, ID= -250µA VDS = -50V, VGS = 0V VGS = ±20V, VDS = 0V Min Typ Max Units Notes -50 - - V - - -1 µA - - ±100 nA On Characteristics Symbol Parameters RDS(ON) Drain-Source On-Resistance VGS(TH) Gate-Source Threshold Voltage Test Conditions VGS = -5V, ID = -100mA VGS = VDS, ID = -250µA Min Typ Max Units Notes Ω- 5 10 Fig 4 -0.8 -
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