Datasheet4U.com

H11B255 Datasheet PDF

CT Micro H11B255

The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option.
Part No. H11B255
Datasheet H11B255 Download
Manufacturer
CT Micro
Description Photodarlington Optocoupler
Buy Stock & Price
H11B255 datasheet page 1 preview

FEATURES

● High isolation 5000 VRMS
● CTR flexibility available see order information
● DC input with transistor output
● Temperature range - 55 °C to 100 °C
● Regulatory Approvals
● UL - UL1577 (E364000)
● VDE - EN60747-5-5(VDE0884-5)
● CQC – GB4943.1, GB8898
● IEC60065, IEC60950

APPLICATIONS

● Switch mode power supplies
● Computer peripheral interface
● Microprocessor system interface

DESCRIPTION

Package Outline Schematic Note: Different bending options available. See package dimension. CT Microelectronics Proprietary & Confidential Page 1 Rev 1 Apr, 2014 4N29, 4N30, 4N31, 4N32, 4N33 H11B1, H11B2, H11B3, H11B255, TIL113 DC Input 6-Pin Photodarlington Optocoupler Absolute Maximum Rating at 25oC Symbol Parameters VISO Isolation voltage TOPR Operating temperature TSTG Storage temperature TSOL Soldering temperature Emitter IF IF(TRANS) Forward current Peak transient current (≤1μs P.W,300pps) VR Reverse voltage PD Power dissipation Detector PD Power dissipation BVCEO Collector-Emitter Bre...
H11B255 page 2 preview H11B255 page 3 preview