CT Micro H11B255
The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option.FEATURES
● High isolation 5000 VRMS● CTR flexibility available see order information
● DC input with transistor output
● Temperature range - 55 °C to 100 °C
● Regulatory Approvals
● UL - UL1577 (E364000)
● VDE - EN60747-5-5(VDE0884-5)
● CQC – GB4943.1, GB8898
● IEC60065, IEC60950
APPLICATIONS
● Switch mode power supplies● Computer peripheral interface
● Microprocessor system interface
DESCRIPTION
Package Outline Schematic Note: Different bending options available. See package dimension. CT Microelectronics Proprietary & Confidential Page 1 Rev 1 Apr, 2014 4N29, 4N30, 4N31, 4N32, 4N33 H11B1, H11B2, H11B3, H11B255, TIL113 DC Input 6-Pin Photodarlington Optocoupler Absolute Maximum Rating at 25oC Symbol Parameters VISO Isolation voltage TOPR Operating temperature TSTG Storage temperature TSOL Soldering temperature Emitter IF IF(TRANS) Forward current Peak transient current (≤1μs P.W,300pps) VR Reverse voltage PD Power dissipation Detector PD Power dissipation BVCEO Collector-Emitter Bre...