Datasheet Details
| Part number | HIRC2808Q12-B20 |
|---|---|
| Manufacturer | CT Micro |
| File Size | 766.21 KB |
| Description | Infrared Emitter |
| Datasheet | HIRC2808Q12-B20-CTMicro.pdf |
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Overview: HIRC2808Q12-B20 SMD Type 855nm Infrared Emitter.
| Part number | HIRC2808Q12-B20 |
|---|---|
| Manufacturer | CT Micro |
| File Size | 766.21 KB |
| Description | Infrared Emitter |
| Datasheet | HIRC2808Q12-B20-CTMicro.pdf |
|
|
|
The HIRC2808Q12-B20 is a GaAlAs infrared LED housed in a miniature SMD package.
The device has a peak wavelength of 855nm LED spectrally matched with phototransistor or photodiode.
Package Outline Schematic Anode Cathode CT Micro Proprietary & Confidential Page 1 Rev 0(Preliminary) Mar, 2014 HIRC2808Q12-B20 SMD Type 855nm Infrared Emitter Absolute Maximum Rating at 250C Symbol Parameters IF Continuous Forward Current IFP Peak Forward Current VR Reverse Voltage Topr Operating Temperature Tstg Storage Temperature Tsol Soldering Temperature PD Power Dissipation at(or below) 25℃Free Air Temperature Ratings 70 0.7 5 -40 ~ +85 -40 ~ +100 260 140 Units mA A V 0C 0C 0C mW Notes 1 2 Electro-Optical Characteristics TA = 25°C (unless otherwise specified) Optical Characteristics Symbol Parameters Ie Radiant Intensity λp Δλ θ1/2 Peak Wavelength Spectral Bandwidth Angle of Half Intensity Test Conditions IF=20mA IF =70mA IF=20mA IF=20mA IF=20mA Min Typ Max Units Notes 1.5 3.0 - 10 mW/sr - - 855 - nm - 30 - nm - 60 - deg Electrical Characteristics Symbol Parameters VF Forward Voltage IR Reverse Current Test Conditions IF=20mA IF=70mA VR=5V Notes: 1.
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