Datasheet Details
| Part number | HIRP2406W14-B10 |
|---|---|
| Manufacturer | CT Micro |
| File Size | 958.53 KB |
| Description | Infrared Emitter |
| Datasheet | HIRP2406W14-B10-CTMicro.pdf |
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Overview: HIRP2406W14-B10 SMD Type 850nm Infrared Emitter.
| Part number | HIRP2406W14-B10 |
|---|---|
| Manufacturer | CT Micro |
| File Size | 958.53 KB |
| Description | Infrared Emitter |
| Datasheet | HIRP2406W14-B10-CTMicro.pdf |
|
|
|
The HIRP2406W14-B10 is a GaAlAs infrared LED housed in a miniature SMD package.
The device has a peak wavelength of 850nm LED spectrally matched with phototransistor or photodiode.
Package Outline Schematic Anode Cathode CT Micro Proprietary & Confidential Page 1 Rev 1 Apr, 2018 HIRP2406W14-B10 SMD Type 850nm Infrared Emitter Absolute Maximum Rating at 250C Symbol Parameters IF Continuous Forward Current IFP Peak Forward Current VR Reverse Voltage Topr Operating Temperature Tstg Storage Temperature Tsol Soldering Temperature PD Power Dissipation at(or below) 25℃ Free Air Temperature RTHJA Junction to Ambient Thermal Resistance Ratings 70 0.7 5 -40 ~ +85 -40 ~ +100 260 140 540 Units mA A V 0C 0C 0C mW 0C/W Notes 1 2 Electro-Optical Characteristics TA = 25°C (unless otherwise specified) Optical Characteristics Symbol Parameters Ie Radiant Intensity λp Peak Wavelength Δλ Spectral Bandwidth θ1/2 Angle of Half Intensity (X) Angle of Half Intensity (Y) Test Conditions IF=20mA IF =70mA IF=20mA IF=20mA IF=20mA Min Typ Max Units Notes 2.50 4.0 - 13.5 mW/sr - - 850 - nm - 30 - nm - 55.0 deg 3 - 25.0 - Electrical Characteristics Symbol Parameters VF Forward Voltage IR Reverse Current Test Conditions IF=20mA IF=70mA VR=5V Notes: 1 : IFP Conditions--Pulse Width≦ 100μs and Duty≦ 1%.
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