Datasheet Details
| Part number | IR300N-D0 |
|---|---|
| Manufacturer | CT Micro |
| File Size | 782.69 KB |
| Description | Infrared Emitter |
| Datasheet | IR300N-D0-CTMicro.pdf |
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Overview: IR300N-D0 3mm Lamp Type 940nm Infrared Emitter.
| Part number | IR300N-D0 |
|---|---|
| Manufacturer | CT Micro |
| File Size | 782.69 KB |
| Description | Infrared Emitter |
| Datasheet | IR300N-D0-CTMicro.pdf |
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The IR300N-D0 is a GaAlAs infrared LED diode.
The device has a peak wavelength of 940nm LED spectrally matched with phototransistor or photodiode.
Package Outline Schematic Anode Cathode CT Micro Proprietary & Confidential Page 1 Rev 1 May, 2014 IR300N-D0 3mm Lamp Type 940nm Infrared Emitter Absolute Maximum Rating at 250C Symbol Parameters IF Continuous Forward Current IFP Peak Forward Current VR Reverse Voltage Topr Operating Temperature Tstg Storage Temperature Tsol Soldering Temperature PD Power Dissipation at(or below) 25℃Free Air Temperature Ratings 100 1.0 5 -40 ~ +85 -40 ~ +100 260 180 Units mA A V 0C 0C 0C mW Notes 1 2 Electro-Optical Characteristics TA = 25°C (unless otherwise specified) Optical Characteristics Symbol Parameters Ie Radiant Intensity λp Δλ θ1/2 Peak Wavelength Spectral Bandwidth Angle of Half Intensity Test Conditions IF=20mA IF =100mA, Tp=20ms IF=20mA IF=20mA IF=20mA Min Typ Max Units Notes 6.5 12 30 3 mW/sr - 55 - - 940 - nm - 50 - nm - 15 - deg Electrical Characteristics Symbol Parameters VF Forward Voltage IR Reverse Current Test Conditions IF=20mA IF =100mA, Tp=20ms VR=5V Min Typ Max Units Notes 1.1 1.2 1.5 1.2 1.39 1.8 - - 10 V μA Notes: 1 : IFP Conditions--Pulse Width≦ 100μs and Duty≦ 1%.
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