CXW 3075
The uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.| Part No. | 3075 |
|---|---|
| Datasheet | 3075 Download |
| Manufacturer |  CXW |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
GENERAL FEATURES
● RDS(ON) < Ω @ VGS=4.5V RDS(ON) < Ω @ VGS=10V● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package D D DD Application
● PWM applications
● Load switch
● Power management SSSG PIN1 DATASHEET 3424 PIN1
●
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol Drain-source Voltage Gate-source Voltage Drain Current TC=25℃ TC=100℃ Pulsed Drain Current A Total Power Dissipation TC=25℃ TC=100℃ Single Pulse Avalanche Energy B Thermal Resistance Junction-to-Case C Junction and Storage Temperature Range VDS VGS ID IDM PD EAS RθJC TJ ,TSTG Limit 30 ±20 30 21 120 35 15 29 -55～+150 1 /6 Unit V V A A W W mJ ℃/ W ℃ N-channel Enhancement Mode MOSFETELECTRICAL CHARACTERISTICS
(TA=25℃unless otherwise noted) 3075 DATASHEET 3424 Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage BVDSS IDSS IGSS VGS(th) 0V,V VGS= 0V, ID=250μA VDS= 24V,VGS=0V TJ=25℃ TJ=55℃ VGS= ±20V, VDS=0V VDS= VGS, ID=250μA 30 V 1 10 ±100 μA nA 1.
