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3622DE - Dual N-Channel MOSFET

Datasheet Summary

Description

The uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Features

  • RDS(ON) < m Ω @ VGS=10V RDS(ON) < mΩ @ VGS=4.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet Details

Part number 3622DE
Manufacturer CXW
File Size 864.98 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet 3622DE Datasheet
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Full PDF Text Transcription

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Dual N-channelEnhancementMode MOSFET DESCRIPTION The uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES  RDS(ON) < m Ω @ VGS=10V RDS(ON) < mΩ @ VGS=4.
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