CXW 4435
P-Channel MOSFET
GENERAL FEATURES
● RDS(ON) < RDS(ON) < Ω @ Ω @● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package Application
● PWM applications
● Load switch
● Power management 4435 DATASHEET 3424 D G S S1 S2 S3 G4 8 D 7D 6D 5D Marking and pin assignment
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Drain-source Voltage Gate-source Voltage Drain Current TA=25℃ @ Steady State TA=70℃ @ Steady State Pulsed Drain Current A Total Power Dissipation @ TA=25℃ Thermal Resistance Junction-to-Ambient @ Steady State B Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD RθJA TJ ,TSTG Maximum -30 ±20 -10 -8 -50 3.0 42 -55~+150 Unit V V A A W ℃/ W ℃ 1 P-channel Enhancement Mode MOSFETELECTRICAL CHARACTERISTICS
(TA=25℃unless otherwise noted) 4435 DATASHEET 3424 Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Sta...