CXW D607
The is the highest performance trench N-Ch and P-Ch MOSFETs With extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.DESCRIPTION
D607 DATASHEETGENERAL FEATURES
FEATURES
n-channel p-channel VDS (V) = 30V -30V ID = 12A (VGS=10V) -12A (VGS = -10V) RDS(ON) RDS(ON) < 29 mΩ (VGS=10V) < 55 mΩ (VGS = -10V) < 40 mΩ (VGS=4.5V) < 68 mΩ (VGS = -4.5V) 100% UIS Tested! Application● Drivers: Relays, lamps, Memories.
● Battery operated systems.
● CCFL Back-light Inverter XX
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ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Symbol Parameter VDSS VGSS ID IDM TJ TSTG PD Drain-Source Voltage Gate-Source Voltage Continuous Drain Current ,(VGS=10V) Drain Current (Pulse) Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation (Ta=25℃) Rating N-Ch P-Ch 30 -30 ±20 ±20 12 -12 40 -40 -55 TO 175 -55 TO 175 25 25 Unit V A A °C W N-ch and P-ch Fast Switching MOSFET D607 DATASHEETELECTRICAL CHARACTERISTICS
(TA=25℃unless otherwise noted) PPaarraammeetetrer SSyymmbbooll CCoonndditiitoionsns MMinin Static Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Cur...