BAS16N3 - High speed switching diode

CYStech Electronics

General Description

The BAS16N3 is a high-speed switching diode fabricated in planar technology, and encapsulated in a small SOT-23 plastic SMD package.

Key Features

Small plastic SMD package.
High switching speed: max. 4ns.
Continuous reverse voltage: max. 100V.
Repetitive peak reverse voltage: max. 110V.
Repetitive peak forward current: max. 500mA.

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BAS16N3 high speed switching diode by CYStech Electronics - Datasheet Preview

Datasheet Details

Part number	BAS16N3
Manufacturer	CYStech Electronics
File Size	298.10 KB
Description	High speed switching diode
Datasheet	BAS16N3 Datasheet

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Other Datasheets by CYStech Electronics

Part Number	Description
BAS21	High voltage switching (double) diodes
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BAS21N3	High voltage switching diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. High –speed switching diode Spec. No. : C303N3-A Issued Date : 2005.12.02 Revised Date : 2013.09.27 Page No. : 1/6 BAS16N3 Description The BAS16N3 is a high-speed switching diode fabricated in planar technology, and encapsulated in a small SOT-23 plastic SMD package. Equivalent Circuit BAS16N3 Outline SOT-23 1 Cathode 2 3 1：Anode 2：Not Connected 3：Cathode Anode NC Features • Small plastic SMD package • High switching speed: max. 4ns • Continuous reverse voltage: max. 100V • Repetitive peak reverse voltage: max. 110V • Repetitive peak forward current: max. 500mA. Applications • High-speed switching in hybrid thick and thin-film circuits.