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BCX56M3 - General Purpose NPN Transistor

Key Features

  • High breakdown voltage, BVCEO≥ 100V.
  • Large continuous collector current capability.
  • Low collector saturation voltage.
  • Complementary to BCX53M3.
  • Pb-free lead plating package BVCEO IC VCESAT 100V 1A 0.13V(typ. ) Symbol BCX56M3 Outline SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissi.

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Datasheet Details

Part number BCX56M3
Manufacturer CYStech Electronics
File Size 293.41 KB
Description General Purpose NPN Transistor
Datasheet download datasheet BCX56M3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor Spec. No. : C304M3 Issued Date : 2007.04.23 Revised Date : 2013.08.07 Page No. : 1/7 BCX56M3 Features • High breakdown voltage, BVCEO≥ 100V • Large continuous collector current capability • Low collector saturation voltage • Complementary to BCX53M3 • Pb-free lead plating package BVCEO IC VCESAT 100V 1A 0.13V(typ.) Symbol BCX56M3 Outline SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation Symbol VCBO VCEO VEBO IC ICP Pd Limits 100 100 5 1 2 0.