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HBN2515S6R - Low Vcesat NPN Epitaxial Planar Transistor

Key Features

  • Two BTD2515 chips in a SOT-363 package.
  • Mounting possible with SOT-323 automatic mounting machines.
  • Transistor elements are independent, eliminating interference.
  • Mounting cost and area can be cut in half.
  • Low VCE(sat), VCE(sat)=25mV (max), at IC / IB = 10mA / 0.5mA.
  • Weight : 9.1mg, approximately.
  • Pb-free package. Equivalent Circuit HBN2515S6R Outline SOT-363 Tr1 Tr2 The following characteristics apply to both Tr1 and Tr2.

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Datasheet Details

Part number HBN2515S6R
Manufacturer CYStech Electronics
File Size 302.95 KB
Description Low Vcesat NPN Epitaxial Planar Transistor
Datasheet download datasheet HBN2515S6R Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C223S6-A Issued Date : 2007.07.18 Revised Date :2011.02.22 Page No. : 1/6 HBN2515S6R (Dual Transistors) Features • Two BTD2515 chips in a SOT-363 package. • Mounting possible with SOT-323 automatic mounting machines. • Transistor elements are independent, eliminating interference. • Mounting cost and area can be cut in half. • Low VCE(sat), VCE(sat)=25mV (max), at IC / IB = 10mA / 0.5mA. • Weight : 9.1mg, approximately. • Pb-free package.