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CYStech Electronics Corp.
Quadruple High Voltage PNP Epitaxial Planar Transistor
Built-in Base Resistor
Spec. No. : C900QF Issued Date : 2009.10.30 Revised Date : 2009.11.20 Page No. : 1/6
HQP1498QF
Description
• High breakdown voltage. (BVCEO=-400V) • Low saturation voltage, typical VCE(sat) =-0.3V at Ic/IB =-20mA/-1mA. • Complementary to HQN2498QF • Pb-free package
Equivalent Circuit
HQP1498QF
Outline
SOP-10
The following ratings and characteristics apply to each transistor in this device. Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
HQP1498QF Preliminar
Symbol VCBO VCEO VEBO IC Pd Tj Tstg
Limits -400 -400 -7 -300 1.