CYStech Electronics LB120A3
General Purpose NPN Epitaxial Planar Transistor
| Part No. | LB120A3 |
|---|---|
| Datasheet | LB120A3 Download |
| Manufacturer |  CYStech Electronics |
| Description | General Purpose NPN Epitaxial Planar Transistor |
| Buy | Stock & Price |
FEATURES
● Low collector saturation voltage● High breakdown voltage, VCEO=400V (min.)
● Pb-free package Symbol LB120A3 Outline TO-92 B：Base C：Collector E：Emitter E CB
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Note : Pulse test, PW ≤ 10ms, Duty ≤ 50%. Symbol VCBO VCEO VEBO IC PD RθJA Tj Tstg Limits 600 400 9 0.5 1 125 150 -55~+150 Unit V V V A W °C/W °C °C LB120A3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(SAT) *VCE(SAT) *hFE tf ts Min. 600 400 9 10 Typ. Max. 15 100 0.3 0.5 40 0.5 2.5 Unit V V V μA nA V V μs Spec. No. : C618A3 Issued Date : 2009.07.07 Revised Date : Page No. : 2/3 Test Conditions IC=100μA IC=1mA IE=10μA VCB=600V, IE=0 VEB=8V, IC=0 IC=50mA, IB=10mA IC=200mA, IB=40mA VCE=20V, IC=20mA VCE=100V, IC=300mA,...
