Datasheet4U Logo Datasheet4U.com

LB120A3 - General Purpose NPN Epitaxial Planar Transistor

Key Features

  • Low collector saturation voltage.
  • High breakdown voltage, VCEO=400V (min. ).
  • Pb-free package Symbol LB120A3 Outline TO-92 B：Base C：Collector E：Emitter E CB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Note : Pulse test, PW ≤ 10ms, Duty ≤ 50%. Symbol VCBO VCEO VEBO IC PD RθJA.

📥 Download Datasheet

Datasheet Details

Part number LB120A3
Manufacturer CYStech Electronics
File Size 181.55 KB
Description General Purpose NPN Epitaxial Planar Transistor
Datasheet download datasheet LB120A3 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
LB120A TECHNICAL SPECIFICATIONS OF NPN TRIPLE DIFFUSED PLANAR TRANSISTOR ETC
LB1201AB DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS Power Innovations Limited
LB1201AS DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS Power Innovations Limited
LB1205 High-Voltage / High- Current Darlington Driver Sanyo
LB1205 Monolithic Digital IC ON Semiconductor

Other Datasheets by CYStech Electronics

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor Spec. No. : C618A3 Issued Date : 2009.07.07 Revised Date : Page No. : 1/3 LB120A3 Features • Low collector saturation voltage • High breakdown voltage, VCEO=400V (min.) • Pb-free package Symbol LB120A3 Outline TO-92 B：Base C：Collector E：Emitter E CB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Note : Pulse test, PW ≤ 10ms, Duty ≤ 50%. Symbol VCBO VCEO VEBO IC PD RθJA Tj Tstg Limits 600 400 9 0.5 1 125 150 -55~+150 Unit V V V A W °C/W °C °C LB120A3 CYStek Product Specification http://www.Datasheet4U.