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MBNP2026G6 Datasheet N-channel Enhancement Mode MOSFET And PNP BJT Complex Device

Manufacturer: CYStech Electronics

Overview: CYStech Electronics Corp. Spec. No. : C197G6 Issued Date : 2011.01.20 Revised Date : Page No.

Datasheet Details

Part number MBNP2026G6
Manufacturer CYStech Electronics
File Size 269.02 KB
Description N-Channel Enhancement mode MOSFET AND PNP BJT Complex Device
Datasheet MBNP2026G6-CYStechElectronics.pdf

General Description

The MBNP2026G6 consists of a N-channel enhancement-mode MOSFET and a PNP BJT in a single TSOP-6 package, providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TSOP-6 package is universally preferred for all mercial-industrial surface mount applications.

Key Features

  • Simple drive requirement.
  • Low gate charge.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free package Equivalent Circuit MBNP2026G6 Outline TSOP-6 C2 S1 D1 G：Gate B : Base S：Source E : Emitter D：Drain C : Collector B2 E2 G1 MBNP2026G6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C197G6 Issued Date : 2011.01.20 Revised Date : Page No. : 2/10 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Breakdown Voltage G.

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