MBNP2026G6 - N-Channel Enhancement mode MOSFET AND PNP BJT Complex Device

Description

The MBNP2026G6 consists of a N-channel enhancement-mode MOSFET and a PNP BJT in a single TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

Simple drive requirement.
Low gate charge.
Low on-resistance.
Fast switching speed.
Pb-free package Equivalent Circuit MBNP2026G6 Outline TSOP-6 C2 S1 D1 G：Gate B : Base S：Source E : Emitter D：Drain C : Collector B2 E2 G1 MBNP2026G6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C197G6 Issued Date : 2011.01.20 Revised Date : Page No. : 2/10 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Breakdown Voltage G.

CYStech Electronics

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Datasheet Details

Part number	MBNP2026G6
Manufacturer	CYStech Electronics
File Size	269.02 KB
Description	N-Channel Enhancement mode MOSFET AND PNP BJT Complex Device
Datasheet	MBNP2026G6 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C197G6 Issued Date : 2011.01.20 Revised Date : Page No. : 1/10 N- Channel Enhancement mode MOSFET AND PNP BJT Complex Device MBNP2026G6 Description The MBNP2026G6 consists of a N-channel enhancement-mode MOSFET and a PNP BJT in a single TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TSOP-6 package is universally preferred for all commercial-industrial surface mount applications.

Published: Jun 23, 2016 |