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MTB013N10RH8 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • RDSON(TYP) VGS=10V, ID=15A VGS=4.5V, ID=10A.
  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Repetitive Avalanche Rated.
  • Pb-free lead plating and Halogen-free package 100V 42A 14.3A 9.8mΩ 11.1mΩ Symbol MTB013N10RH8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device MTB013N10RH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shi.

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Datasheet Details

Part number MTB013N10RH8
Manufacturer CYStech Electronics
File Size 572.17 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB013N10RH8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C056H8 Issued Date : 2016.08.29 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTB013N10RH8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C Features RDSON(TYP) VGS=10V, ID=15A VGS=4.5V, ID=10A • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Repetitive Avalanche Rated • Pb-free lead plating and Halogen-free package 100V 42A 14.3A 9.8mΩ 11.