Datasheet Summary
CYStech Electronics Corp.
Spec. No. : C056H8 Issued Date : 2016.08.29 Revised Date : Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTB013N10RH8 BVDSS ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
Features
RDSON(TYP)
VGS=10V, ID=15A VGS=4.5V, ID=10A
- Single Drive Requirement
- Low On-resistance
- Fast Switching Characteristic
- Repetitive Avalanche Rated
- Pb-free lead plating and Halogen-free package
100V 42A 14.3A 9.8mΩ 11.1mΩ
Symbol
G：Gate D：Drain S：Source
Outline
Pin 1
DFN5×6
Pin 1
Ordering Information
Device MTB013N10RH8-0-T6-G
Package
DFN 5 ×6 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / tape &...