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MTB030N10RE3 - N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics

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MTB030N10RE3 N-Channel Enhancement Mode Power MOSFET by CYStech Electronics - Datasheet Preview — Datasheet preview – MTB030N10RE3

Datasheet Details

Part number	MTB030N10RE3
Manufacturer	CYStech Electronics
File Size	347.28 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB030N10RE3 Datasheet
Additional preview pages of the MTB030N10RE3 datasheet.

Product details

Features

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=15A 100V 29A 5.5A 26.4 mΩ(typ) 30.8 mΩ(typ) Symbol MTB030N10RE3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device Package Shipping MTB030N10RE3-0-UB-X TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/bo.

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Published: Oct 26, 2016 |