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MTC4503H8 - P- & N-Channel Enhancement Mode Power MOSFET

Key Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free lead plating and halogen-free package N-CH 30V 9.4A 27A 13mΩ 17mΩ P-CH -30V -7.8A -22.5A 21mΩ 35mΩ Equivalent Circuit MTC4503H8 Outline Pin 1 DFN5×6 G:Gate S:Source D:Drain Ordering Information Device MTC4503H8-0-T6-G Package Shipping DFN 5 ×6 (Pb-free lead plating & halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G.

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Datasheet Details

Part number MTC4503H8
Manufacturer CYStech Electronics
File Size 540.08 KB
Description P- & N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTC4503H8 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C384H8 Issued Date : 2015.07.16 Revised Date : 2015.09.03 Page No. : 1/13 N- AND P-Channel Enhancement Mode MOSFET MTC4503H8 BVDSS ID@VGS=10V(-10V), TA=25°C ID@VGS=10V(-10V), TC=25°C RDSON(typ)@VGS=10V(-10V) RDSON(typ)@VGS=4.5V(-4.5V) Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package N-CH 30V 9.4A 27A 13mΩ 17mΩ P-CH -30V -7.8A -22.