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MTC7540BDH8 - P- & N-Channel Enhancement Mode Power MOSFET

Key Features

  • Simple drive requirement.
  • Low on-resistance ID@VGS=4.5V(-4.5V), TC=100°C RDSON(typ)@VGS=4.5V(-4.5V) RDSON(typ)@VGS=2.5V(-2.5V).
  • Fast switching speed.
  • Pb-free lead plating and halogen-free package N-CH 14V 10.6A 8.5A 25.8A 16.3A 15.7mΩ 24.4mΩ P-CH -14V -9.5A -7.6A -23.0A -14.6A 21.3mΩ 32.2mΩ Equivalent Circuit MTC7540BDH8 Outline Pin 1 DFN5×6 G：Gate S：Source D：Drain Ordering Information Device MTC7540BDH8-0-T6-G Package Shipping DFN 5 ×6 (Pb-free.

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Datasheet Details

Part number MTC7540BDH8
Manufacturer CYStech Electronics
File Size 682.02 KB
Description P- & N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTC7540BDH8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Spec. No. : C088H8 CYStech Electronics Corp. Issued Date : 2016.09.09 Revised Date : 2016.09.12 Page No. : 1/14 N- AND P-Channel Enhancement Mode MOSFET MTC7540BDH8 BVDSS ID@VGS=4.5V(-4.5V), TA=25°C ID@VGS=4.5V(-4.5V), TA=70°C ID@VGS=4.5V(-4.5V), TC=25°C Features • Simple drive requirement • Low on-resistance ID@VGS=4.5V(-4.5V), TC=100°C RDSON(typ)@VGS=4.5V(-4.5V) RDSON(typ)@VGS=2.5V(-2.5V) • Fast switching speed • Pb-free lead plating and halogen-free package N-CH 14V 10.6A 8.5A 25.8A 16.3A 15.7mΩ 24.4mΩ P-CH -14V -9.5A -7.6A -23.0A -14.6A 21.3mΩ 32.