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MTN7451J3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Simple Drive Requirement.
  • Repetitive Avalanche Rated.
  • Fast Switching Characteristic.
  • RoHS compliant package.
  • Pb-free lead plating and halogen-free package BVDSS ID RDS(ON)@VGS=10V, ID=4A RDS(ON)@VGS=6V, ID=2A 150V 24A 54mΩ(typ) 57mΩ(typ) Symbol MTN7451J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G D S Ordering Information Device MTN7451J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel.

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Datasheet Details

Part number MTN7451J3
Manufacturer CYStech Electronics
File Size 345.32 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTN7451J3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C841J3 Issued Date : 2012.05.04 Revised Date : 2013.12.30 Page No.