Datasheet4U Logo Datasheet4U.com

MTN9N60BE3 - N-Channel Enhancement Mode Power MOSFET

Description

The MTN9N60BE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • RoHS compliant package.

📥 Download Datasheet

Datasheet Details

Part number MTN9N60BE3
Manufacturer CYStech Electronics
File Size 396.36 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTN9N60BE3 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MTN003N03S3 30V N-CHANNEL Enhancement Mode MOSFET CYStech
MTN1012C3 N-Channel Enhancement Mode MOSFET CYStech
MTN1012ZC3 N-Channel Enhancement Mode MOSFET CYStech
MTN10N40E3 N-Channel Enhancement Mode Power MOSFET CYStech
MTN10N60BE3 N-Channel Enhancement Mode Power MOSFET CYStech

Other Datasheets by CYStech Electronics

Part Number Description
MTN9N60BFP N-Channel Enhancement Mode Power MOSFET
MTN9N65BFP N-Channel Enhancement Mode Power MOSFET
MTN9N65CE3 N-Channel Enhancement Mode Power MOSFET
MTN9N65CFP N-Channel Enhancement Mode Power MOSFET
MTN9N50BFP N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. Spec. No. : C125E3 Issued Date : 2016.03.21 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTN9N60BE3 BVDSS ID @ VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=4.5A 600V 8.5A 0.79Ω Description The MTN9N60BE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Published: |