Datasheet Summary
CYStech Electronics Corp.
Spec. No. : C125E3 Issued Date : 2016.03.21 Revised Date : Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTN9N60BE3 BVDSS ID @ VGS=10V, TC=25°C
RDSON(TYP) @ VGS=10V, ID=4.5A
600V 8.5A 0.79Ω
Description
The MTN9N60BE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all mercial-industrial applications
Features
- Low On Resistance
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching Characteristic
- RoHS pliant package
Applications
- Switching Mode Power Supply
-...