MTNK3C3 - ESD protected N-CHANNEL MOSFET

Description

Low voltage drive, 1.8V.

Easy to use in parallel.

High speed switching.

ESD protected device.

Pb-free package.

CYStech Electronics

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Datasheet Details

Part number	MTNK3C3
Manufacturer	CYStech Electronics
File Size	314.63 KB
Description	ESD protected N-CHANNEL MOSFET
Datasheet	MTNK3C3 Datasheet
Additional preview pages of the MTNK3C3 datasheet.

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CYStech Electronics Corp. ESD protected N-CHANNEL MOSFET Spec. No. : C447C3 Issued Date : 2011.09.19 Revised Date : Page No. : 1/6 MTNK3C3 Description • Low voltage drive, 1.8V. • Easy to use in parallel. • High speed switching. • ESD protected device. • Pb-free package. BVDSS ID RDSON 20V 100mA 3Ω Symbol MTNK3C3 Outline SOT-523 D G：Gate S：Source D：Drain G S Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Total Power Dissipation ESD susceptibility Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Ambient Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2%. *2. When device mounted on recommended land pattern. *3. Human body model, 1.5kΩ in series with 100pF.

Published: May 24, 2014 |