CYStech Electronics MTNK3C3
ESD protected N-CHANNEL MOSFET
| Part No. | MTNK3C3 |
|---|---|
| Datasheet | MTNK3C3 Download |
| Manufacturer |  CYStech Electronics |
| Description | ESD protected N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
● Low voltage drive, 1.8V.● Easy to use in parallel.
● High speed switching.
● ESD protected device.
● Pb-free package. BVDSS ID RDSON 20V 100mA 3Ω Symbol MTNK3C3 Outline SOT-523 D G：Gate S：Source D：Drain G S
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Total Power Dissipation ESD susceptibility Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Ambient Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2%. *2. When device mounted on recommended land pattern. *3. Human body model, 1.5kΩ in series with 100pF. Symbol BVDSS VGS ID IDM PD Tj Rth,ja Limits 20 ±8 100 400 *1 150 *2 350 *3 -55~+150 833 Unit V V mA mA mW V °C °C/W MTNK3C3 CYStek Product Specification CYStech Electronics Corp.ELECTRICAL CHARACTERISTICS
(Ta=25°C) Symbol Static BVDSS VGS(th) IGSS IDSS RDS(ON) Min. 20 0.5 100 Typ. 1.7 3.5 23 7.7 5.8 Max. 1.0 ±1 500 3 6 50 25 5 1 Unit V V μA nA Ω mS Spec. No. :...
