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MTNN8451KQ8 - Asymmetric Dual N-Channel MOSFET

Description

The MTNN8451KQ8 uses advanced trench technology to provide excellent RDS(on) and low gate charge.

Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free lead plating and halogen-free package Equivalent Circuit MTNN8451KQ8 Outline SOP-8 G：Gate S：Source D：Drain MTNN8451KQ8 CYStek Product Specification http://www. Datasheet4U. com CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current (Note 2) Spec. No. : C558Q8 Issued.

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Datasheet Details

Part number MTNN8451KQ8
Manufacturer CYStech Electronics
File Size 398.61 KB
Description Asymmetric Dual N-Channel MOSFET
Datasheet download datasheet MTNN8451KQ8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Asymmetric Dual N-Channel Enhancement Mode MOSFET Spec. No. : C558Q8 Issued Date : 2012.04.28 Revised Date : 2012.04.30 Page No. : 1/12 MTNN8451KQ8 Description BVDSS ID RDSON(TYP.)@VGS=10V RDSON(TYP.)@VGS=4.5V FET1 30V 6.8A 15mΩ 23mΩ FET 2 30V 10.2A 11mΩ 18mΩ The MTNN8451KQ8 uses advanced trench technology to provide excellent RDS(on) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications.
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