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MTP2611V8 - P-Channel Enhancement Mode MOSFET

Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free lead plating and halogen-free package BVDSS ID RDSON@VGS=-4.5V, ID=-15.3A RDSON@VGS=-2.5V, ID=-13.1A -20V -45A 8.8mΩ(typ) 12.8mΩ(typ) Equivalent Circuit MTP2611V8 Outline DFN3×3 Pin 1 G：Gate S：Source D：Drain Ordering Information Device MTP2611V8-0-T6-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S fo.

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Datasheet Details

Part number MTP2611V8
Manufacturer CYStech Electronics
File Size 366.13 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTP2611V8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. P-Channel Enhancement Mode MOSFET Spec. No. : C913V8 Issued Date : 2013.07.08 Revised Date : 2013.10.30 Page No. : 1/9 MTP2611V8 Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package BVDSS ID RDSON@VGS=-4.5V, ID=-15.3A RDSON@VGS=-2.5V, ID=-13.1A -20V -45A 8.8mΩ(typ) 12.
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