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MTP3J36Y3 - -20V P-CHANNEL Enhancement Mode MOSFET

Features

  • -20V -350mA 0.64Ω(typ) 0.68Ω(typ) 1.1Ω(typ) 1.7Ω(typ).
  • Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th).

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Datasheet Details

Part number MTP3J36Y3
Manufacturer CYStech Electronics
File Size 385.94 KB
Description -20V P-CHANNEL Enhancement Mode MOSFET
Datasheet download datasheet MTP3J36Y3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C698Y3 Issued Date : 2012.07.13 Revised Date : Page No. : 1/ 8 -20V P-CHANNEL Enhancement Mode MOSFET BVDSS ID RDSON@VGS=-4.5V, ID=-350mA RDSON@VGS=-4V, ID=-300mA RDSON@VGS=-2.5V, ID=-300mA RDSON@VGS=-1.8V, ID=-150mA MTP3J36Y3 Features -20V -350mA 0.64Ω(typ) 0.68Ω(typ) 1.1Ω(typ) 1.7Ω(typ) • Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th)<1.2V. • Compact industrial standard SOT-523 surface mount package. • Pb-free package. Equivalent Circuit MTP3J36Y3 Outline SOT-723 D G：Gate S：Source D：Drain G S Absolute Maximum Ratings (Tj=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=-4.5V Continuous Drain Current @ TA=85°C, VGS=-4.
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