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MTP3LP01N3 - 30V P-CHANNEL Enhancement Mode MOSFET

Features

  • Ultra high speed switching.
  • Low gate charge.
  • 2.5V drive.
  • Pb-free lead plating and halogen-free package. BVDSS ID RDSON(typ) -30V -230mA 3Ω@-4V 4.6Ω@-2.5V 10.9Ω@-1.5V Equivalent Circuit MTP3LP01N3 Outline SOT-23 D G：Gate S：Source D：Drain G S Ordering Information Device MTP3LP01N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoH.

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Datasheet Details

Part number MTP3LP01N3
Manufacturer CYStech Electronics
File Size 366.48 KB
Description 30V P-CHANNEL Enhancement Mode MOSFET
Datasheet download datasheet MTP3LP01N3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. 30V P-CHANNEL Enhancement Mode MOSFET Spec. No. : 794N3 Issued Date : 2010.06.17 Revised Date : 2014.01.17 Page No. : 1/ 9 MTP3LP01N3 Features • Ultra high speed switching. • Low gate charge. • 2.5V drive. • Pb-free lead plating and halogen-free package. BVDSS ID RDSON(typ) -30V -230mA 3Ω@-4V 4.6Ω@-2.5V 10.9Ω@-1.
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