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MTP405CJ3 - P-Channel Enhancement Mode Power MOSFET

Key Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast switching Characteristic.
  • Pb-free lead plating and halogen-free package BVDSS ID RDS(ON)@VGS=-10V, ID=-18A RDS(ON)@VGS=-4.5V, ID=-10A -30V -34A 21mΩ(typ) 33mΩ(typ) Symbol MTP405CJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G D S Ordering Information Device MTP405CJ3-0-T3-G Package TO-252 (Pb-free lead plating package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant.

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Datasheet Details

Part number MTP405CJ3
Manufacturer CYStech Electronics
File Size 403.42 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTP405CJ3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET Spec. No. : C386J3 Issued Date : 2007.06.08 Revised Date : 2014.03.14 Page No. : 1/9 MTP405CJ3 Features • Single Drive Requirement • Low On-resistance • Fast switching Characteristic • Pb-free lead plating and halogen-free package BVDSS ID RDS(ON)@VGS=-10V, ID=-18A RDS(ON)@VGS=-4.