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MTP4403SQ8 - P-Channel Enhancement Mode Power MOSFET

General Description

The MTP4403SQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Key Features

  • RDS(ON)=46mΩ@VGS=-10V, ID=-6.1A RDS(ON)=61mΩ@VGS=-4.5V, ID=-5A.
  • Simple drive requirement.
  • Low gate charge.
  • Low voltage drive (2.5V).
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free lead plating package Equivalent Circuit MTP4403SQ8 Outline SOP-8 G：Gate S：Source D：Drain Ordering Information Device MTP4403SQ8 Package SOP-8 (Pb-free lead plating package) MTP4403SQ8 Shipping 3000 pcs / Tape & Reel CYStek Product Specification.

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Datasheet Details

Part number MTP4403SQ8
Manufacturer CYStech Electronics
File Size 581.61 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTP4403SQ8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C804Q8 Issued Date : 2009.12.16 Revised Date : 2011.03.21 Page No. : 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP4403SQ8 BVDSS -20V RDSON(MAX) 46mΩ ID -6.1A Description The MTP4403SQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features • RDS(ON)=46mΩ@VGS=-10V, ID=-6.1A RDS(ON)=61mΩ@VGS=-4.5V, ID=-5A • Simple drive requirement • Low gate charge • Low voltage drive (2.