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MTP4409H8 - P-Channel Enhancement Mode Power MOSFET

General Description

The MTP4409H8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Key Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Dynamic dv/dt rating.
  • Repetitive Avalanche Rated.
  • Pb-free lead plating and Halogen-free package Symbol MTP4409H8 Outline Pin 1 EDFN5×6 G:Gate D:Drain S:Source MTP4409H8 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=-10V Con.

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Datasheet Details

Part number MTP4409H8
Manufacturer CYStech Electronics
File Size 237.82 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTP4409H8 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C808H8 Issued Date : 2013.09.02 Revised Date : Page No. : 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET MTP4409H8 BVDSS ID RDSON(TYP) VGS=-10V, ID=-15A VGS=-4.5V, ID=-10A -30V -15A 7.3mΩ 11mΩ Description The MTP4409H8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rating • Repetitive Avalanche Rated • Pb-free lead plating and Halogen-free package Symbol MTP4409H8 Outline Pin 1 EDFN5×6 G:Gate D:Drain S:Source MTP4409H8 CYStek Product Specification CYStech Electronics Corp.