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MTP4411M3 - P-Channel Enhancement Mode MOSFET

Key Features

  • Single Drive Requirement.
  • Ultra High Speed Switching.
  • Pb-free lead plating package Symbol MTP4411M3 Outline SOT-89 G：Gate S：Source D：Drain G DD S Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Pulsed Drain Current Total Power Dissipation (TA=25℃) ID -5 ID -4 IDM -20.
  • 1, 3 Pd 1.5.
  • 2 Linear Derating Factor 0.

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Datasheet Details

Part number MTP4411M3
Manufacturer CYStech Electronics
File Size 239.17 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTP4411M3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C400M3 Issued Date : 2011.10.06 Revised Date : 2013.08.07 Page No. : 1/8 -30V P-CHANNEL Enhancement Mode MOSFET MTP4411M3 BVDSS ID RDSON@VGS=-10V, ID=-4A RDSON@VGS=-4.5V, ID=-3A -30V -5A 40mΩ (typ.) 58mΩ (typ.) Features • Single Drive Requirement • Ultra High Speed Switching • Pb-free lead plating package Symbol MTP4411M3 Outline SOT-89 G：Gate S：Source D：Drain G DD S Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Pulsed Drain Current Total Power Dissipation (TA=25℃) ID -5 ID -4 IDM -20 *1, 3 Pd 1.5 *2 Linear Derating Factor 0.