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MTP4463Q8 - P-Channel Enhancement Mode Power MOSFET

Description

The MTP4463Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free and Halogen-free package Equivalent Circuit MTP4463Q8 Outline SOP-8 G:Gate S:Source D:Drain MTP4463Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C913Q8 Issued Date : 2013.06.18 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current.

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Datasheet Details

Part number MTP4463Q8
Manufacturer CYStech Electronics
File Size 257.30 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTP4463Q8 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C913Q8 Issued Date : 2013.06.18 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTP4463Q8 BVDSS ID RDSON@VGS=-4.5V, ID=-14A RDSON@VGS=-2.5V, ID=-10A -20V -14A 8.8mΩ(typ) 12.8mΩ(typ) Description The MTP4463Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
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