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MTP452M3 - 30V P-CHANNEL Enhancement Mode MOSFET

Key Features

  • Single Drive Requirement.
  • Low On-resistance, RDS(ON)=50mΩ(typ. )@VGS=-10V, ID=-3.2A RDS(ON)=72mΩ(typ. )@VGS=-4.5V, ID=-2.6A.
  • Ultra High Speed Switching.
  • Pb-free package Symbol MTP452M3 Outline SOT-89 G：Gate S：Source D：Drain G D D S Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Pulsed Drain Current Total Power Dissipation (TA=25℃.

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Datasheet Details

Part number MTP452M3
Manufacturer CYStech Electronics
File Size 326.75 KB
Description 30V P-CHANNEL Enhancement Mode MOSFET
Datasheet download datasheet MTP452M3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. 30V P-CHANNEL Enhancement Mode MOSFET Spec. No. : C426M3 Issued Date : 2012.02.07 Revised Date : Page No. : 1/8 MTP452M3 Features • Single Drive Requirement • Low On-resistance, RDS(ON)=50mΩ(typ.)@VGS=-10V, ID=-3.2A RDS(ON)=72mΩ(typ.)@VGS=-4.5V, ID=-2.6A • Ultra High Speed Switching • Pb-free package Symbol MTP452M3 Outline SOT-89 G：Gate S：Source D：Drain G D D S Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Pulsed Drain Current Total Power Dissipation (TA=25℃) Total Power Dissipation (TA=70℃) Operating Junction and Storage Temperature Note : *1.