CYStech Electronics MTP452M3
30V P-CHANNEL Enhancement Mode MOSFET
| Part No. | MTP452M3 |
|---|---|
| Datasheet | MTP452M3 Download |
| Manufacturer |  CYStech Electronics |
| Description | 30V P-CHANNEL Enhancement Mode MOSFET |
| Buy | Stock & Price |
FEATURES
● Single Drive Requirement● Low On-resistance, RDS(ON)=50mΩ(typ.)@VGS=-10V, ID=-3.2A RDS(ON)=72mΩ(typ.)@VGS=-4.5V, ID=-2.6A
● Ultra High Speed Switching
● Pb-free package Symbol MTP452M3 Outline SOT-89 G：Gate S：Source D：Drain G D D S
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Pulsed Drain Current Total Power Dissipation (TA=25℃) Total Power Dissipation (TA=70℃) Operating Junction and Storage Temperature Note : *1. Pulse width limited by maximum junction temperature VDS VGS ID ID IDM PD Tj, Tstg -30 ±20 -5.3 -4.2 -20 *1, 3 2 *2 1.3 *2 -55~+150 V V A A A W °C *2. Surface mounted on 1 in² copper pad of FR-4 board; 270 °C/W when mounted on min. copper pad *3. Pulse width≤300μs, duty cycle≤2% MTP452M3 CYStek Product Specification CYStech Electronics Corp.THERMAL PERFORMANCE
Parameter Thermal Resistance, Junction-to-Ambient Note : Surface mounted on 1 in² copper pad of FR-4 board.
