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MTS2072G6 - Dual N-Channel Enhancement Mode MOSFET

General Description

The MTS2072G6 consists of two different N-channel enhancement-mode MOSFETs in a single TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • Simple drive requirement.
  • Low gate charge.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free lead plating and halogen-free package Equivalent Circuit MTS2072G6 Outline TSOP-6 S2 G2 D1 G：Gate S：Source D：Drain Pin 1 D2 S1 G1 MTS2072G6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C.

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Datasheet Details

Part number MTS2072G6
Manufacturer CYStech Electronics
File Size 346.39 KB
Description Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTS2072G6 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C879G6 Issued Date : 2012.10.09 Revised Date : Page No. : 1/13 Dual N-Channel Enhancement Mode MOSFET MTS2072G6 BVDSS Tr1(N-CH) 60V ID 0.53A(VGS=10V) RDSON(TYP.) 1.2Ω(VGS=10V) 1.6Ω(VGS=4.5V) Tr2(N-CH) 30V 5.6A(VGS=10 V) 16.6mΩ(VGS=10V) 24.7mΩ(VGS=4.5V) Description The MTS2072G6 consists of two different N-channel enhancement-mode MOSFETs in a single TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TSOP-6 package is universally preferred for all commercial-industrial surface mount applications.