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BTA3513I3 - PNP Transistor

Datasheet Summary

Features

  • Low VCE(sat).
  • High BVCEO.
  • Excellent current gain characteristics.
  • RoHS compliant package BVCEO IC RCESAT Spec. No. : C607I3 Issued Date : 2012.02.10 Revised Date : Page No. : 1/9 -80V -10A 75mΩ typ. Symbol BTA3513I3 Outline TO-251 B：Base C：Collector E：Emitter BB CC E Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipa.

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Datasheet Details

Part number BTA3513I3
Manufacturer CYStech
File Size 207.17 KB
Description PNP Transistor
Datasheet download datasheet BTA3513I3 Datasheet
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CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTA3513I3 Features • Low VCE(sat) • High BVCEO • Excellent current gain characteristics • RoHS compliant package BVCEO IC RCESAT Spec. No. : C607I3 Issued Date : 2012.02.10 Revised Date : Page No. : 1/9 -80V -10A 75mΩ typ. Symbol BTA3513I3 Outline TO-251 B：Base C：Collector E：Emitter BB CC E Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP PD PD RθJA RθJC Tj Tstg Note : 1.
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