BTB1386M3 Description
CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB1386M3 Spec. 2005.03.25 Revised Date.
BTB1386M3 Key Features
- Low VCE(sat), VCE(sat)=-0.25 V (typical), at IC / IB = -3A / -60mA
- Excellent DC current gain characteristics
- plementary to BTD2098M3
- Pb-free lead plating and halogen-free package