BTB1386M3
BTB1386M3 is PNP Transistor manufactured by CYStech.
Features
- Low VCE(sat), VCE(sat)=-0.25 V (typical), at IC / IB = -3A / -60m A
- Excellent DC current gain characteristics
- plementary to BTD2098M3
- Pb-free lead plating and halogen-free package
Symbol
Outline
SOT-89
B：Base C：Collector E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current
Power Dissipation
Operating Junction and Storage Temperature Range Note : 1. Single Pulse Pw=10ms
2. When mounted on a 40 ×40 ×0.7 mm ceramic board.
Thermal Data
Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Thermal Resistance, Junction-to-ambient, max (Note )
Note : When mounting on a 40 ×40 ×0.7 mm ceramic board.
Symbol VCBO VCEO VEBO IC ICP Pd...
