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BTB5839M3 - PNP Transistor

Datasheet Summary

Features

  • Low VCE(sat), VCE(sat)=-0.3 V (max), at IC / IB = -2A / -0.1A.
  • Excellent current gain characteristics.
  • Pb-free lead plating and halogen-free package Symbol BTB5839M3 Outline SOT-89 B:Base C:Collector E:Emitter BCE Ordering Information Device Package Shipping BTB5839M3-0-T2-G SOT-89 1000 pcs / Tape & Reel (Pb-free lead plating and halogen-free package) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing sp.

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Datasheet Details

Part number BTB5839M3
Manufacturer CYStech
File Size 353.59 KB
Description PNP Transistor
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Full PDF Text Transcription

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CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB5839M3 Spec. No. : C240M3 Issued Date : 2012.10.18 Revised Date : 2014.08.06 Page No. : 1/8 Features  Low VCE(sat), VCE(sat)=-0.3 V (max), at IC / IB = -2A / -0.
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