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BTC3149E3 Datasheet High Voltage NPN Triple Diffused Planar Transistor

Manufacturer: CYStech

Overview: CYStech Electronics Corp. High Voltage NPN Triple Diffused Planar Transistor BTC3149E3 Spec. No. : C663E3 Issued Date : 2012.02.13 Revised Date : Page No.

Datasheet Details

Part number BTC3149E3
Manufacturer CYStech
File Size 194.68 KB
Description High Voltage NPN Triple Diffused Planar Transistor
Datasheet BTC3149E3-CYStech.pdf

Key Features

  • High voltage, BVCBO=1600V min. , BVCEO=800V min.
  • Pb-free lead plating package Symbol BTC3149E3 Outline TO-220 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating Junction and Storage Temperature Range Note :.
  • 1. Single Pulse Pw≦300μs,Duty≦2%. Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(Ta=25℃) Pd(Tc=25℃) Tj ; Tstg Limit 1600 800.

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