High BVCEO
High current capability
Complementary to BTB1236AJ3G
RoHS compliant and Halogen-free package
Symbol
BTD1857AJ3G
Outline
TO-252AB
TO-252AA
B：Base C：Collector E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collecto
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CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor
BTD1857AJ3G
BVCEO IC RCESAT
Spec. No. : C855J3G Issued Date : 2004.10.04 Revised Date :2010.12.08 Page No. : 1/7
160V 1.5A 310mΩ
Description
• High BVCEO • High current capability • Complementary to BTB1236AJ3G • RoHS compliant and Halogen-free package
Symbol
BTD1857AJ3G
Outline
TO-252AB
TO-252AA
B：Base C：Collector E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP
PD
Tj Tstg
BTD1857AJ3G
BCE
B CE
Limits
180 160
5 1.
BTD1857AJ3G Datasheet
