BTP9050N3 - High Voltage PNP Epitaxial Planar Transistor

Description

High breakdown voltage.

Low saturation voltage, typical VCE(sat) =-0.2V at Ic/IB =-20mA/-2mA.

Complementary to BTNA45N3 Pb-free lead plating and halogen-free package Symbol BTP9050N3 Outline SOT-23 C B：Base C：Collector E：Emitter E B Ordering Information De

CYStech

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Datasheet Details

Part number	BTP9050N3
Manufacturer	CYStech
File Size	438.11 KB
Description	High Voltage PNP Epitaxial Planar Transistor
Datasheet	BTP9050N3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. High Voltage PNP Epitaxial Planar Transistor BTP9050N3 Spec. No. : C619N3 Issued Date : 2012.08.21 Revised Date : 2014.08.06 Page No. : 1/8 Description  High breakdown voltage. (BVCEO=-500V)  Low saturation voltage, typical VCE(sat) =-0.2V at Ic/IB =-20mA/-2mA.

Published: Feb 14, 2020 |