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MTA7D0P02V8 - P-Channel MOSFET

Key Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free lead plating package BVDSS ID@ TC=25C, VGS=-4.5V ID@ TA=25C, VGS=-4.5V RDSON @VGS=-4.5V, ID=-20A RDSON @VGS=-2.5V, ID=-20A RDSON @VGS=-1.8V, ID=-20A -20V -49A -12A 7.7mΩ(typ. ) 9.5mΩ(typ. ) 12.5 mΩ(typ. ) Equivalent Circuit MTA7D0P02V8 Outline DFN3×3 G：Gate S：Source D：Drain Pin 1 Ordering Information Device MTA7D0P02V8-0-T6-G Package Shipping DFN3×3 (Pb-free lead plating and.

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Datasheet Details

Part number MTA7D0P02V8
Manufacturer CYStech
File Size 810.84 KB
Description P-Channel MOSFET
Datasheet download datasheet MTA7D0P02V8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET MTA7D0P02V8 Spec. No. : C036V8 Issued Date : 2018.06.28 Revised Date : 2020.02.25 Page No. : 1/10 Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating package BVDSS ID@ TC=25C, VGS=-4.5V ID@ TA=25C, VGS=-4.5V RDSON @VGS=-4.5V, ID=-20A RDSON @VGS=-2.5V, ID=-20A RDSON @VGS=-1.8V, ID=-20A -20V -49A -12A 7.7mΩ(typ.) 9.5mΩ(typ.) 12.5 mΩ(typ.