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CYStech Electronics Corp.
Spec. No. : C808H8 Issued Date : 2018.02.05 Revised Date : Page No. : 1/ 11
P-Channel Enhancement Mode Power MOSFET
MTA7D0P03H8
BVDSS ID@VGS=-10V, TC=25°C ID@VGS=-10V, TA=25°C
VGS=-10V, ID=-15A
Features
• Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package
RDSON(TYP) VGS=-4.5V, ID=-10A VGS=-3V, ID=-5A
-30V -55A -12.3A 7.1mΩ 9.3mΩ 14.