Datasheet Summary
CYStech Electronics Corp.
Spec. No. : C430H8 Issued Date : 2018.07.24 Revised Date : 2018.07.25 Page No. : 1/ 10
Dual N-Channel Enhancement Mode Power MOSFET
Features
- Low On Resistance
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching Characteristic
- Pb-free lead plating and Halogen-free package
BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C
RDS(ON)@VGS=10V, ID=12A
RDS(ON)@VGS=4.5V, ID=7A
30V 36A 23A 8.8A 7.0A 7.3mΩ(typ) 9.6mΩ(typ)
Equivalent Circuit
Outline
Pin 1
DFN5×6 Pin 1
G：Gate D：Drain S：Source
Ordering Information
Device MTB010A03H8-0-T6-G
Package DFN 5 ×6 (Pb-free lead plating and halogen-free...