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MTB060N06I3 Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: CYStech

Overview: CYStech Electronics Corp. Spec. No. : C708I3 Issued Date : 2014.04.30 Revised Date : 2015.05.05 Page No. : 1/8 N -Channel Enhancement Mode Power MOSFET MTB060N06I3 BVDSS ID@VGS=10V, TC=25°C RDSON(MAX)@VGS=10V, ID=10A RDSON(MAX)@VGS=5V, ID=8A 60V 16A 35mΩ(typ.) 40mΩ(typ.

Datasheet Details

Part number MTB060N06I3
Manufacturer CYStech
File Size 344.96 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet MTB060N06I3-CYStech.pdf

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Pb-free lead plating and halogen-free package Equivalent Circuit MTB060N06I3 Outline TO-251 G：Gate D：Drain S：Source G DS Ordering Information Device Package Shipping MTB060N06I3-0-UA-G TO-251 (Pb-free lead plating and halogen-free package) 80 pcs/tube, 50 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UA :80 pcs / tube, 50 tubes.

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