MTB060N06I3 Description
CYStech Electronics Corp. 2014.04.30 Revised Date.
MTB060N06I3 Key Features
- Low Gate Charge
- Simple Drive Requirement
- Pb-free lead plating and halogen-free package
MTB060N06I3 is N-Channel Enhancement Mode Power MOSFET manufactured by CYStech.
| Part Number | Description |
|---|---|
| MTB060N15J3 | N-Channel Enhancement Mode Power MOSFET |
| MTB060P06I3 | P-Channel Enhancement Mode Power MOSFET |
| MTB060P15H8 | P-Channel Enhancement Mode Power MOSFET |
| MTB06N03E3 | N-Channel Enhancement Mode Power MOSFET |
| MTB010A03H8 | Dual N-Channel Enhancement Mode Power MOSFET |
CYStech Electronics Corp. 2014.04.30 Revised Date.