Datasheet4U Logo Datasheet4U.com

MTB060N15J3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Pb-free lead plating and halogen-free package Equivalent Circuit MTB060N15J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB060N15J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel.

📥 Download Datasheet

Datasheet Details

Part number MTB060N15J3
Manufacturer CYStech
File Size 313.67 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB060N15J3 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MTB06N03H8 N-Channel Logic Level Enhancement Mode Power MOSFET Cystech Electonics
MTB06N03J3 N-Channel Enhancement Mode Power MOSFET Cystech Electonics
MTB06N03Q8 N-Channel Logic Level Enhancement Mode Power MOSFET Cystech Electonics
MTB001 High Output Interface Driver ICs Shindengen Electric
MTB001D01-1 LCD Module CSOT

Other Datasheets by CYStech

Part Number Description
MTB060N06I3 N-Channel Enhancement Mode Power MOSFET
MTB060P06I3 P-Channel Enhancement Mode Power MOSFET
MTB060P15H8 P-Channel Enhancement Mode Power MOSFET
MTB06N03E3 N-Channel Enhancement Mode Power MOSFET
MTB010A03H8 Dual N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. Spec. No. : C970J3 Issued Date : 2014.06.14 Revised Date : 2014.06.16 Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET MTB060N15J3 BVDSS ID @VGS=10V RDS(ON)@VGS=10V, ID=4A RDS(ON)@VGS=4.